SI5519DU

www.DataSheet.co.kr Si5519DU Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 RDS(on) (Ω) 0.036 at VGS = 4.5 V 0.063 at VGS = 2.5 V 0.064 at VGS = - 4.5 V 0.095 at VGS = - 2.5 V ID (A)a Qg (Typ.) 6.0 6.0 - 6.0 - 6.0 6.0 nC 5.4 nC FEATURES Halogen-free TrenchFET® Power MOSFETs RoHS APPLICATIONS Portable DC-DC Applications COMPLIANT P-Channel - 20 PowerPAK ChipFET Dual D1 1 S1 G1 D1 S2 2 3 S2 G2 4 G2 8 7 G1 Marking Code EB XXX Lot Traceability and Date Code Part # Code S1 N-Channel MOSFET D2 P-Channel MOSFET D1 D2 6 5 D2 Bottom View Ordering Information: Si5519DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS N-Channel 20 ± 12 6.0a 6.0a 6.0a, b, c 4.9b, c 25 6.0a 1.9b, c 10.4 6.6 2.27b, c 1.45b, c - 55 to 150 260 - 6.0a - 4.8b, c - 3.8b, c - 20 - 6.0a - 1.9b, c 10.4 6.6 2.27b, c 1.45b, c 6.0a P-Channel - 20 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Source Drain Current Diode Current A Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS N-Channel Parameter b, f P-Channel Typ. 43 9.5 Max. 55 12 Unit Maximum Junction-to-Ambient °C/W...