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SI5517DU Dataheets PDF



Part Number SI5517DU
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description N- and P-Channel MOSFET
Datasheet SI5517DU DatasheetSI5517DU Datasheet (PDF)

www.vishay.com Si5517DU Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PowerPAK® ChipFET® Dual D2 D2 6 D1 7 D1 8 5 1.9 mm 1 3.0 mm Top View Marking code: EA 1 4 G2 3 S2 2 G1 S1 Bottom View PRODUCT SUMMARY N-CHANNEL P-CHANNEL VDS (V) RDS(on) () at VGS = ± 4.5 V RDS(on) () at VGS = ± 2.5 V RDS(on) () at VGS = ± 1.8 V Qg typ. (nC) ID (A) a Configuration 20 -20 0.039 0.072 0.045 0.100 0.055 0.131 6 5.5 6 -6 N- and p-pair FEATURES • TrenchFET® power MOSFETs • .

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www.vishay.com Si5517DU Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PowerPAK® ChipFET® Dual D2 D2 6 D1 7 D1 8 5 1.9 mm 1 3.0 mm Top View Marking code: EA 1 4 G2 3 S2 2 G1 S1 Bottom View PRODUCT SUMMARY N-CHANNEL P-CHANNEL VDS (V) RDS(on) () at VGS = ± 4.5 V RDS(on) () at VGS = ± 2.5 V RDS(on) () at VGS = ± 1.8 V Qg typ. (nC) ID (A) a Configuration 20 -20 0.039 0.072 0.045 0.100 0.055 0.131 6 5.5 6 -6 N- and p-pair FEATURES • TrenchFET® power MOSFETs • Thermally enhanced PowerPAK ChipFET package - Small footprint area - Low on-resistance - Thin 0.8 mm profile • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D1 S2 • Complementary MOSFET for portable devices G2 - Ideal for circuits buck-boost G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK ChipFET Si5517DU-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current Source-drain current diode current Maximum power dissipation Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS PD TJ, Tstg 20 ±8 6a 6a 7.2 b, c 5.8 b, c 20 6.9 1.9 b, c 8.3 5.3 2.3 b, c 1.5 b, c -55 to +150 260 -20 ±8 -6 a -6 a -4.6 b, c -3.7 b, c -15 -6.9 -1.9 b, c 8.3 5.3 2.3 b, c 1.5 b, c UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b, f Maximum junction-to-case (drain) SYMBOL t5s Steady state RthJA RthJC N-CHANNEL TYP. MAX. 45 55 12 15 P-CHANNEL TYP. MAX. 45 55 12 15 UNIT °C/W Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 105 °C/W for both channels S-81449-Rev. B, 23-Jun-08 1 Document Number: 73529 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com Si5517DU Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-source breakdown voltage VDS temperature coefficient VGS(th) temperature coefficient Gate-source threshold voltage VDS VDS/TJ VGS(th)/TJ VGS(th) VGS = 0 V, ID = 1 mA VGS = 0 V, ID = -1 mA ID = 250 μA ID = -250 μA ID = 250 μA ID = -250 μA VDS = VGS, ID = 250 μA VDS = VGS, ID = -250 μA Gate-body leakage IGSS VDS = 0 V, VGS = ± 8 V Zero gate voltage drain current On-state drain current b Drain-source on-state resistance b Forward transconductance b Dynamic a IDSS ID(on) RDS(on) gfs VDS = 20 V, VGS = 0 V VDS = -20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS = -20 V, VGS = 0 V, TJ = 55 °C VDS 5 V, VGS = 4.5 V VDS  -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 4.4 A VGS = -4.5 V, ID = -3.3 A VGS = 2.5 V, ID = 4.1 A VGS = -2.5 V, ID = -2.8 A VGS = 1.8 V, ID = 1.8 A VGS = -1.8 V, ID = -0.76 A VDS = 10 V, ID = 4.4 A VDS = -10 V, ID = -3.3 A Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Ciss Coss Crss Qg Qgs Qgd N-channel VDS = 10 V, VGS = 0 V, f = 1 MHz P-channel VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 8 V, ID = 4.4 A VDS = -10 V, VGS = -8 V, ID = -4.6 A VDS = 10 V, VGS = 4.5 V ID = 4.4 A VDS = -10 V, VGS = -4.5 V, ID = -1.8 A N-channel VDS = 10 V, VGS = 4.5 V ID = 4.4 A P-channel VDS = -10 V, VGS = -4.5 V, ID = -1.8 A Gate resistance Rg f = 1 MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch MIN. 20 -20 0.4 -0.4 20 -15 - - TYP. a MAX. UNIT 17 -20 -2.6 2.4 0.0320 0.0600 0.0370 0.0830 0.0455 0.1080 22 0.9 1 -1 100 -100 1 -1 10 -10 0.0390 0.0720 0.0450 0.1000 0.0550 0.1310 - V mV/°C V nA μA A  S 520 - 455 - 100 - pF 105 - 60 - 65 - 10.5 16 9.1 14 6 9 5.5 8.5 nC 0.91 - 0.75 - 0.7 - 1.5 - 1.9 -  8 - S-81449-Rev. B, 23-Jun-08 2 Document Number: 73529 For technical questions, contact: pmostechsu.


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