SI5440DC

www.DataSheet.co.kr New Product Si5440DC Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.019 at VGS = 10 V 0.024 at VGS = 4.5 V ID (A)a 6 6 9 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 TrenchFET® Power MOSFET APPLICATIONS Load Switches - Notebook PC 1206-8 ChipFET ® 1 D D D D S D D G D G Bottom View S N-Channel MOSFET Ordering Information: Si5440DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Continuous Source-Drain Diode Current Soldering Recommendations (Peak Temperature) e, f Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM IS Limit 30 ± 20 6a 6a 6 6a, b, c 30 5.2 2.1b, c 6.3 4 2.5b, c 1.6b, c - 55 to 150 260 a, b, c Unit V A PD TJ, Tstg W °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit RthJA t≤5s 40 50 Maximum Junction-to-Ambienta, c, d °C/W RthJF Maximum Junction-to-Foot (Drain) Steady State 15 20 Notes: a. Package limited, TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 95 °C/W. e. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the sing...