SI4914BDY

www.DataSheet.co.kr Si4914BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) 0.021 at VGS = 10 V 0.027 at VGS = 4.5 V 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)a Qg (Typ.) 8.4 7.4 8d 8d 6.7 FEATURES Halogen-free According to IEC 61249-2-21 Definition LITTLE FOOT® Plus Integrated Schottky 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC 7.0 APPLICATIONS Notebook PC - System Power dc-to-dc IF (A) 2.0 D1 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V at 1.0 A SO-8 G1 D1 D1 G2 S2 1 2 3 4 Top View Ordering Information: Si4914BDY-T1-E3 (Lead (Pb)-free) Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 G1 S1/D2 S1/D2 S1/D2 G2 N-Channel 2 MOSFET S2 Schottky Diode N-Channel 1 MOSFET S1/D2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C)a, b TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Current PulseD Source-Drain Current Single-Pulse Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH TC = 25 °C Maximum Power Dissipationa, b TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Package limited. Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 ...