SI4904DY

www.DataSheet.co.kr Si4904DY Vishay Siliconix Dual N-Channel 40-V MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.016 at VGS = 10 V 0.019 at VGS = 4.5 V ID (A) 8 56 8 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET 100 % Rg Tested UIS Tested APPLICATIONS CCFL Inverter SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 Ordering Information: Si4904DY-T1-E3 (Lead (Pb)-free) Si4904DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 D2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID Limit 40 ± 16 8 8 8b, c 6.5b, c 20 2.7 1.6b, c 20 20 20 3.25 2.10 2.0b, c 1.25b, c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS ISM IAS EAS PD A Maximum Power Dissipation W Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W. Document Number: 73793 S09-0540-Rev. C,...