N-Channel MOSFET
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Si4840BDY
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) (Ω) 0.00...
Description
www.DataSheet.co.kr
Si4840BDY
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) (Ω) 0.009 at VGS = 10 V 0.012 at VGS = 4.5 V ID (A)d 19 15 nC 16 Qg (Typ.)
FEATURES
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS directive 2002/95/EC
APPLICATIONS
SO-8
S S S G 1 2 3 4 Top View S Ordering Information: Si4840BDY-T1-E3 (Lead (Pb)-free) Si4840BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G
Synchronous Rectification POL, IBC - Secondary Side
D
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH Symbol VDS VGS ID IDM IAS EAS IS Limit 40 ± 20 19 15 12.4a, b 9.9a, b 50 15 11 5 2.1a, b 6 3.8 2.5a, b 1.6a, b - 55 to 150 Unit V
A
mJ A
TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range
PD TJ, Tstg
W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 37 17 Maximum 50 21 Unit °C/W
Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d....
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