SI4816BDY

www.DataSheet.co.kr Si4816BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) 0.0185 at VGS = 10 V 0.0225 at VGS = 4.5 V 0.0115 at VGS = 10 V 0.016 at VGS = 4.5 V ID (A) 6.8 6.0 11.4 9.5 Qg (Typ.) 7.8 11.6 FEATURES Halogen-free According to IEC 61249-2-21 Available LITTLE FOOT® Plus Power MOSFET 100 % Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V at 1.0 A IF (A) 2.0 D1 SO-8 G1 A/S2 A/S2 G2 1 2 3 4 Top View Ordering Information: Si4816BDY-T1-E3 (Lead (Pb)-free) Si4816BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D1 D2/S1 D2/S1 D2/S1 G2 N-Channel 2 MOSFET S2 A Schottky Diode G1 N-Channel 1 MOSFET S1/D2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Channel-1 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipationa a Channel-2 10 s Steady State Unit V 11.4 9.0 40 2.2 20 20 mJ 1.25 0.8 W °C 8.2 6.5 A 1.15 30 20 Symbol VDS VGS TA = 25 °C TA = 70 °C ID IDM IS IAS EAS PD TJ, Tstg 10 s Steady State 6.8 5.5 30 1 10 5 1.4 0.9 5.8 4.6 0.9 L = 0.1 mH TA = 25 °C TA = 70 °C 1.0 0.64 2.4 1.5 - 55 to 150 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Channel-1 Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) ...