SI4812BDY

www.DataSheet.co.kr Si4812BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.016 at VGS = 10 V 0.021 at VGS = 4.5 V ID (A) 9.5 7.7 FEATURES Halogen-free According to IEC 61249-2-21 Available LITTLE FOOT® Plus Power MOSFET 100 % Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V at 1.0 A IF (A) 1.4 D 8 7 6 5 Top View Ordering Information: Si4812BDY-T1-E3 (Lead (Pb)-free) Si4812BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D D D D Schottky Diode G N-channel MOSFET S SO-8 S S S G 1 2 3 4 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Limit Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150 °C) (MOSFET)a, b Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation (MOSFET)a, b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range Conduction)a, b TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IF IFM IAS EAS PD 9.5 7.7 50 2.1 1.4 30 5 1.25 2.5 1.6 2.0 1.3 - 55 to 150 1.4 0.9 1.2 0.8 1.2 0.8 A 10 s 30 30 ± 20 7.3 5.9 Steady State Unit V L = 0.1 mH TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C mJ W TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (t ≤ 10 s)a Maximum ...