SI4210DY

www.DataSheet.co.kr New Product Si4210DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0355 at VGS = 10 V 0.044 at VGS = 4.5 V ID (A) 6.5 5.8 3.7 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % UIS Tested 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 Set Top Box Low Current DC/DC D1 D2 G1 G2 S1 Ordering Information: Si4210DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 6.5a 5.2 5.2b, c 4.2b, c 24 2.25 1.48b, c 5 1.25 2.7 1.77 1.78b, c 1.14b, c - 55 to 150 mJ Unit V A TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 58 38 Maximum 70 45 Unit °C/W Notes: a. Package limited, TC = 25 °C. b. Surface Mounted on 1" x 1" FR...