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2SK2936
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-559B (Z) 3rd. Edition Jun 1998 Features
Low on-resistance R DS =0.010 Ω typ. High speed switching 4V gate drive device can be driven from 5V source
Outline
TO–220CFM
D
G 1 2 3
S
1. Gate 2. Drain 3. Source
Datasheet pdf - http://www.DataSheet4U.net/
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