SI4174DY

www.DataSheet.co.kr New Product Si4174DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0095 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 17 8 nC 14.5 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 TrenchFET® Power MOSFET 100 % Rg and UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D G D D S Ordering Information: Si4174DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 17 13.5 12b, c 9.6b, c 50 4.5 2.2b, c 20 20 5 3.2 2.5b, c 1.6b, c - 55 to 150 mJ Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 38 20 Maximum 50 25 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 68998 S-82773-Rev. A, 17-Nov-08 www.vishay.co...