SI4114DY

www.DataSheet.co.kr New Product Si4114DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.006 at VGS = 10 V 0.007 at VGS = 4.5 V ID (A)a 20e 20e Qg (Typ.) 27.5 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS SO-8 S S S G 1 2 3 4 Top View S 8 7 6 5 D D D D G Low-Side MOSFET for Synchronous Buck - Game Machine - PC D Ordering Information: Si4114DY-T1-E3 (Lead (Pb)-free) Si4114DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 20 ± 16 20e 18.2 15.2b, c 12.1b, c 50 5.1 2.2b, c 30 45 5.7 3.6 2.5b, c 1.6b, c - 55 to 150 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A mJ TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 39 18 Maximum 50 22 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d....