SI4108DY

www.DataSheet.co.kr New Product Si4108DY Vishay Siliconix N-Channel 75-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) 0.0098 at VGS = 10 V ID (A)a 20.5 Qg (Typ.) 36 nC FEATURES Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS SO-8 S S S G 1 2 3 4 Top View S 8 7 6 5 D D D D G Primary Side Switch Half Bridge Intermediate Bus Converter D Ordering Information: Si4108DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 75 ± 20 20.5 16.4 13.8b, c 11.1b, c 60 6.5 3b, c 32 51.2 7.8 5 3.6b, c 2.3b, c - 55 to 150 260 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 29 13 Maximum 35 16 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is...