SI3932DV

www.DataSheet.co.kr New Product Si3932DV Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.058 at VGS = 10 V 0.073 at VGS = 4.5 V ID (A)a 3.7 1.8 nC 3.3 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TSOP-6 Top View G1 1 6 D1 Load Switch for Portable Applications DC/DC Converters D1 Marking Code MH XXX Lot Traceability and Date Code Part # Code G1 G2 D2 3 mm S2 2 5 S1 G2 3 4 D2 2.85 mm S1 Ordering Information: Si3932DV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit 30 ± 20 3.7 3 3.4b, c 2.7b, c 15 1.17 0.95b, c 1.4 0.9 1.14b, c 0.73b, c - 55 to 150 260 Unit V A PD TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot Notes: a. TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 150 °C/W...