SI3585CDV

www.DataSheet.co.kr Si3585CDV Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 RDS(on) () 0.058 at VGS = 4.5 V 0.078 at VGS = 2.5 V 0.195 at VGS = - 4.5 V 0.316 at VGS = - 2.5 V ID (A)a Qg (Typ.) 3.9 3.3 - 2.1 - 1.7 2.9 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC P-Channel - 20 1.6 nC APPLICATIONS Load Switch for Portable Devices DC/DC Converters Drivers: Motor, Solenoid, Relay D1 S2 TSOP-6 Top View G1 1 6 D1 3 mm S2 2 5 S1 Marking Code G1 Lot Traceability and Date Code Part # Code S1 N-Channel MOSFET EC XXX G2 G2 3 4 D2 2.85 mm D2 P-Channel MOSFET Ordering Information: Si3585CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Source Drain Current Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS ID Symbol VDS VGS 3.9 3.1 3.5b, c 2.8b, c 12 1.2 0.9b, c 1.4 0.9 1.1b, c 0.7b, c - 55 to 150 N-Channel 20 ± 12 - 2.1 - 1.7 - 1.9b, c - 1.5b, c -5 - 1.1 - 0.9b, c 1.3 0.8 1.1b, c 0.7b, c °C W A P-Channel - 20 V Unit THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum...