SI3477DV

www.DataSheet.co.kr New Product Si3477DV Vishay Siliconix P-Channel 12 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) () 0.0175 at VGS = - 4.5 V 0.023 at VGS = - 2.5 V 0.033 at VGS = - 1.8 V ID (A)a -8 -8 -8 28.3 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TSOP-6 Top View 1 3 mm 6 Load Switch DC/DC Converters (4) S 2 5 Marking Code (3) G BB XXX Lot Traceability and Date Code Part # Code (1, 2, 5, 6) D 3 4 2.85 mm Ordering Information: Si3477DV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IS IDM ID Symbol VDS VGS Limit - 12 ± 10 - 8a - 8a - 8a, b, c - 7.2b, c - 40 - 3.5 - 1.67b, c 4.2 2.7 2.0b, c 1.3b, c - 55 to 150 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient b, d Symbol t5s Steady State RthJA RthJF Typical 50 22 Maximum 62.5 30 Unit °C/W Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Ma...