SI3465DV

www.DataSheet.co.kr Si3465DV New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET ID (A) −4.0 −2.7 rDS(on) (W) 0.080 @ VGS = −10 V 0.170 @ VGS = −4.5 V APPLICATIONS D Load Switch − Notebook PC − Game Machine TSOP-6 Top View 1 3 mm 6 (3) G 2 5 (4) S 3 4 (1, 2, 5, 6) D P-Channel MOSFET 2.85 mm Ordering Information: Si3465DV-T1—E3 (Lead Free) Marking Code: 5C ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State −20 "20 Unit V −4.0 −3.2 −20 −1.7 2.0 1.3 −55 to 150 −3.0 −2.4 A −0.95 1.14 0.73 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72787 S-40410—Rev. A, 15-Mar-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 52 92 34 Maximum 62.5 110 41 Unit _C/W 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si3465DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Cur...