SI3438DV

www.DataSheet.co.kr New Product Si3438DV Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES ID (A)a 7.4 6.7 Qg (Typ.) 5.3 nC PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.0355 at VGS = 10 V 0.0425 at VGS = 4.5 V Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter TSOP-6 Top View D 1 6 D D (1, 2, 5, 6) 3 mm D 2 5 D Marking Code G 3 4 S AW XXX Lot Traceability and Date Code Part # Code 2.85 mm (4) Ordering Information: Si3438DV-T1-E3 (Lead (Pb)-free) Si3438DV-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET G (3) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 40 ± 20 7.4 5.8 5.5b, c 4.4b, c 20 2.9 1.6b,c 3.5 2.2 2b,c 1.25b,c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) ID A Pulsed Drain Current Continuous Source-Drain Diode Current IDM IS Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot b, d t≤5s Steady State Symbol RthJA RthJF Typical 50 28 Maximum 62.5 35 Unit °C/W Notes: a. Based on 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W. Document Numb...