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SI1972DH Dataheets PDF



Part Number SI1972DH
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Dual N-Channel MOSFET
Datasheet SI1972DH DatasheetSI1972DH Datasheet (PDF)

www.DataSheet.co.kr Si1972DH Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.190 at VGS = 10 V 0.344 at VGS = 4.5 V ID (A)a 1.3 1.3 Qg (Typ.) 0.91 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS) • Load Switch for Portable Applications 6 D1 Marking Code CE XX YY D1 D2 S1 1 G1 2 5 G2 D2 3 4 S2 Lot Traceability and Date.

  SI1972DH   SI1972DH



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www.DataSheet.co.kr Si1972DH Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.190 at VGS = 10 V 0.344 at VGS = 4.5 V ID (A)a 1.3 1.3 Qg (Typ.) 0.91 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS) • Load Switch for Portable Applications 6 D1 Marking Code CE XX YY D1 D2 S1 1 G1 2 5 G2 D2 3 4 S2 Lot Traceability and Date Code Part # Code G1 G2 Top View Ordering Information: Si1972DH-T1-E3 (Lead (Pb)-free) Si1972DH-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 30 ± 20 1.3a 1.3a 1.3a 1.2 4 1.0 0.61c 1.25 0.8 0.74b, c 0.47b, c - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 °C/W. Document Number: 74398 S10-0721-Rev. B, 29-Mar-10 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ Symbol t≤5s Steady State RthJA RthJF Typical 130 80 Maximum 170 100 Unit °C/W www.DataSheet.co.kr Si1972DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 1.2 A, VGS = 0 V 0.85 20 18 16 4 TC = 25 °C 1 4 1.2 40 36 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tr VDD = 15 V, RL = 12.5 Ω ID ≅ 1.2 A, VGEN = 10 V, Rg = 1 Ω VDD = 15 V, RL = 12.5 Ω ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 1.3 A VDS = 15 V, VGS = 4.5 V, ID = 1.3 A VDS = 15 V, VGS = 0 V, f = 1 MHz 75 18 6 1.85 0.91 0.51 0.3 4.5 15 50 7 15 5 10 10 6 25 75 15 25 10 15 15 12 ns Ω 2.8 1.4 nC pF VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≤ 5 V, VGS = 10 V VGS = 10 V, ID = 1.3 A VGS = 4.5 V, ID = 0.29 A VDS = 15 V, ID = 1.3 A 4 0.155 0.278 1.4 0.225 0.340 1.5 30 23.5 - 4.6 2.8 ± 100 1 10 V mV/°C V ns µA A Ω S Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74398 S10-0721-Rev. B, 29-Mar-10 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si1972DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 VGS = 10 V thru 5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 3 TC = 125 °C 0.6 1.0 2 4V 1 0.4 TC = 25 °C TC = - 55 °C 0.2 3V 0 0.0 0.0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.6 100 Transfer Characteristics 0.5 R DS(on) - On-Resistance (Ω) VGS = 4.5 V 0.4 C - Capacitance (pF) 80 Ciss 60 0.3 40 Coss 0.2 VGS = 10 V 0.1 20 Crss 0 0 1 2 ID - Drain Current (A) 3 4 0 5 10 0.0 15 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 I D = 1.3 A VGS - Gate-to-Source Voltage (V) 8 RDS(on) - On-Resistance 1.6 1.8 Capacitance VGS = 10 V and 4.5 V, I D = 1.3 A 1.4 (Normalized) 6 VDS = 1.


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