Document
www.DataSheet.co.kr
Si1972DH
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.190 at VGS = 10 V 0.344 at VGS = 4.5 V ID (A)a 1.3 1.3 Qg (Typ.) 0.91 nC
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SOT-363 SC-70 (6-LEADS)
• Load Switch for Portable Applications
6 D1 Marking Code CE XX YY D1 D2
S1
1
G1
2
5
G2
D2
3
4
S2
Lot Traceability and Date Code Part # Code
G1
G2
Top View
Ordering Information: Si1972DH-T1-E3 (Lead (Pb)-free) Si1972DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 30 ± 20 1.3a 1.3a 1.3a 1.2 4 1.0 0.61c 1.25 0.8 0.74b, c 0.47b, c - 55 to 150 260 °C W A Unit V
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 °C/W. Document Number: 74398 S10-0721-Rev. B, 29-Mar-10 www.vishay.com 1
Datasheet pdf - http://www.DataSheet4U.net/
Symbol t≤5s Steady State RthJA RthJF
Typical 130 80
Maximum 170 100
Unit °C/W
www.DataSheet.co.kr
Si1972DH
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 1.2 A, VGS = 0 V 0.85 20 18 16 4 TC = 25 °C 1 4 1.2 40 36 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tr VDD = 15 V, RL = 12.5 Ω ID ≅ 1.2 A, VGEN = 10 V, Rg = 1 Ω VDD = 15 V, RL = 12.5 Ω ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 1.3 A VDS = 15 V, VGS = 4.5 V, ID = 1.3 A VDS = 15 V, VGS = 0 V, f = 1 MHz 75 18 6 1.85 0.91 0.51 0.3 4.5 15 50 7 15 5 10 10 6 25 75 15 25 10 15 15 12 ns Ω 2.8 1.4 nC pF VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≤ 5 V, VGS = 10 V VGS = 10 V, ID = 1.3 A VGS = 4.5 V, ID = 0.29 A VDS = 15 V, ID = 1.3 A 4 0.155 0.278 1.4 0.225 0.340 1.5 30 23.5 - 4.6 2.8 ± 100 1 10 V mV/°C V ns µA A Ω S Symbol Test Conditions Min. Typ. Max. Unit
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
www.vishay.com 2
Document Number: 74398 S10-0721-Rev. B, 29-Mar-10
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Si1972DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4 VGS = 10 V thru 5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 3 TC = 125 °C 0.6 1.0
2 4V 1
0.4
TC = 25 °C
TC = - 55 °C 0.2 3V
0 0.0
0.0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.6 100
Transfer Characteristics
0.5 R DS(on) - On-Resistance (Ω) VGS = 4.5 V 0.4 C - Capacitance (pF)
80
Ciss
60
0.3
40 Coss
0.2
VGS = 10 V
0.1
20 Crss 0 0 1 2 ID - Drain Current (A) 3 4 0 5 10
0.0
15
20
25
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10 I D = 1.3 A VGS - Gate-to-Source Voltage (V) 8 RDS(on) - On-Resistance 1.6 1.8
Capacitance
VGS = 10 V and 4.5 V, I D = 1.3 A
1.4 (Normalized)
6 VDS = 1.