P-Channel MOSFET
www.DataSheet.co.kr
New Product
Si1443EDH
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (...
Description
www.DataSheet.co.kr
New Product
Si1443EDH
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) - 30 RDS(on) () 0.054 at VGS = - 10 V 0.062 at VGS = - 4.5 V 0.085 at VGS = - 2.5 V ID (A) - 4a - 4a - 3.4 8.6 nC Qg (Typ.)
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Typical ESD Performance 1500 V HBM 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SOT -363 SC-70 (6-LEADS) D 1 6 D
Load Switch for Portable Devices - Cellular Phone - DSC - Portable Game Console - MP3 - GPS Soft Turn-on Load Switch
S
D
2
5
D
G
3 Top View
4
S
Marking Code
G
BTX
Part # code
R
Ordering Information: Si1443EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
XXX
Lot Traceability and Date code
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 30 ± 12 - 4a - 4a - 4a, b, c - 3.4b, c - 15 - 2.3 - 1.3b, c 2.8 1.8 1.6b, c 1b, c - 55 to 150 260 °C W A Unit V
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foo...
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