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SI1443EDH

Vishay Siliconix

P-Channel MOSFET

www.DataSheet.co.kr New Product Si1443EDH Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (...


Vishay Siliconix

SI1443EDH

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www.DataSheet.co.kr New Product Si1443EDH Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () 0.054 at VGS = - 10 V 0.062 at VGS = - 4.5 V 0.085 at VGS = - 2.5 V ID (A) - 4a - 4a - 3.4 8.6 nC Qg (Typ.) Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Typical ESD Performance 1500 V HBM 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT -363 SC-70 (6-LEADS) D 1 6 D Load Switch for Portable Devices - Cellular Phone - DSC - Portable Game Console - MP3 - GPS Soft Turn-on Load Switch S D 2 5 D G 3 Top View 4 S Marking Code G BTX Part # code R Ordering Information: Si1443EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) XXX Lot Traceability and Date code D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 30 ± 12 - 4a - 4a - 4a, b, c - 3.4b, c - 15 - 2.3 - 1.3b, c 2.8 1.8 1.6b, c 1b, c - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foo...




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