DatasheetsPDF.com

MJ6308 Dataheets PDF



Part Number MJ6308
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet MJ6308 DatasheetMJ6308 Datasheet (PDF)

www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·700V Collector-Base Breakdown Capability ·Excellent Dynamic Saturation Characteristics ·Fast swithing ·Low Saturation Voltage ·Advanced Technology Replacement for the 2N6308 APPLICATIONS ·Designed in circuits requiring good dynamio saturation characteristics in swithing power supply applications and other inductive swithing circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO V.

  MJ6308   MJ6308



Document
www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·700V Collector-Base Breakdown Capability ·Excellent Dynamic Saturation Characteristics ·Fast swithing ·Low Saturation Voltage ·Advanced Technology Replacement for the 2N6308 APPLICATIONS ·Designed in circuits requiring good dynamio saturation characteristics in swithing power supply applications and other inductive swithing circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCES VEBO IC IB B MJ6308 PARAMETER Collector-Base Voltage Collector-Emitter Sustaining Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature Range VALUE 700 380 10 8 4 140 200 -65~200 UNIT V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W Rth j-c isc Website:www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ6308 TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 380 V V(BR)EBO Emitter-Collector Breakdown Voltage IE= 1.0mA; IC= 0 10 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=3A; IB= 0.4A 1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 1A B 1 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 0.1 1.5 10 V ICES Collector Cutoff Current VCE=700V; VBE=0V VCE=700V; VBE=0V, Tc=100℃ VEB=10V; IC= 0 mA IEBO Emitter Cutoff current μA hFE DC Current Gain IC= 8A; VCE=5V 5 20 Cob Output Capacitance VCE=10V; IE= 0; ftest=1.0KHz 100 pF isc Website:www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.net/ .


MJ3773 MJ6308 PIC10F320


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)