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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
DESCRIPTION ·700V Collector-Base Breakdown Capability ·Excellent Dynamic Saturation Characteristics ·Fast swithing ·Low Saturation Voltage ·Advanced Technology Replacement for the 2N6308 APPLICATIONS ·Designed in circuits requiring good dynamio saturation characteristics in swithing power supply applications and other inductive swithing circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCES VEBO IC IB
B
MJ6308
PARAMETER Collector-Base Voltage Collector-Emitter Sustaining Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature Range
VALUE 700 380 10 8 4 140 200 -65~200
UNIT V V V A A W ℃ ℃
PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W
Rth j-c
isc Website:www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
MJ6308
TYP
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 10mA; IB= 0
380
V
V(BR)EBO
Emitter-Collector Breakdown Voltage
IE= 1.0mA; IC= 0
10
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC=3A; IB= 0.4A
1
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 6A; IB= 1A
B
1
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
B
1.5 0.1 1.5 10
V
ICES
Collector Cutoff Current
VCE=700V; VBE=0V VCE=700V; VBE=0V, Tc=100℃ VEB=10V; IC= 0
mA
IEBO
Emitter Cutoff current
μA
hFE
DC Current Gain
IC= 8A; VCE=5V
5
20
Cob
Output Capacitance
VCE=10V; IE= 0; ftest=1.0KHz
100
pF
isc Website:www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
.