RD1006LN

www.DataSheet.co.kr Ordering number : ENA1442 RD1006LN SANYO Semiconductors DATA SHEET RD1006LN Features Diffused Junction Silicon Diode Low VF High-Speed Switching Diode High breakdown voltage (VRRM=600V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Peak Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM Conditions Ratings 600 600 10 PW≤100μs, duty cycle≤50% Sine wave 10ms 40 180 150 --55 to +150 Unit V V A A A °C °C IO IOP IFSM Tj Tstg Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr1 trr2 Rth(j-c) IR=1mA IF=10A VR=600V IF=10A, di / dt=100A/μs IF=0.5A, IR=1A Junction-Case : Smoothed DC 16 3.22 Conditions Ratings min 600 1.45 1.6 100 50 typ max Unit V V μA ns ns °C / W Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "spec...