RD0506T

www.DataSheet.co.kr Ordering number : ENA1574 RD0506T SANYO Semiconductors DATA SHEET RD0506T Features Diffused Junction Silicon Diode Low VF High-Speed Switching Diode High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low noise at the time of reverse recovery. Low forward voltage (VF max=1.6V). Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 600 5 Sine wave 10ms, 1 cycle 80 150 --55 to +150 Unit V A A °C °C IO IFSM Tj Tstg Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr1 trr2 Rth(j-c) IR=1mA IF=5A VR=600V IF=5A, di / dt=100A/μs IF=0.5A, IR=1A Junction -Case 40 16 6 Conditions Ratings min 600 1.3 1.6 50 50 typ max Unit V V μA ns ns °C / W Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic s...