MCH6660

www.DataSheet.co.kr Ordering number : ENA1993 MCH6660 SANYO Semiconductors DATA SHEET MCH6660 Features N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications ON-resistance Nch : RDS(on)1=105mΩ(typ.) Pch : RDS(on)1=205mΩ(typ.) 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Conditions N-channel 20 ±10 2 8 0.8 150 --55 to +150 P-channel --20 ±10 --1.5 --6 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7022A-006 2.0 6 5 4 0 t o 0.02 0.15 Product & Package Information Package : MCPH6 JEITA, JEDEC : SC-88, SOT-363 Minimum Packing Quantity : 3,000 pcs./reel 0.25 Packing Type : TL Marking LOT No. LOT No. XM 2.1 1.6 1 0.65 0.25 2 3 0.3 TL 0.85 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 Electrical Connection 6 5 4 0.07 6 5 4 1 2 3 http://semicon.sanyo.com/en/network N0911PE TKIM TC-00002657 No. A1993-1/6 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr MCH6660 Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage ...