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MCH6421 Dataheets PDF



Part Number MCH6421
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Datasheet MCH6421 DatasheetMCH6421 Datasheet (PDF)

www.DataSheet.co.kr Ordering number : ENA1264 MCH6421 SANYO Semiconductors DATA SHEET MCH6421 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg .

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www.DataSheet.co.kr Ordering number : ENA1264 MCH6421 SANYO Semiconductors DATA SHEET MCH6421 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2✕0.8mm) Conditions Ratings 20 ±12 5.5 22 1.5 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=4.5V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V 0.4 2.0 3.8 29 43 69 38 61 99 Ratings min 20 1 ±10 1.3 typ max Unit V μA μA V S mΩ mΩ mΩ Marking : KV Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70908PE TI IM TC-00001490 No. A1264-1/4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr MCH6421 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4.5V, ID=5.5A VDS=10V, VGS=4.5V, ID=5.5A VDS=10V, VGS=4.5V, ID=5.5A IS=5.5A, VGS=0V Ratings min typ 410 84 59 7.5 26 38 32 5.1 0.7 1.7 0.8 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7022A-009 Switching Time Test Circuit VIN 0.25 VDD=10V 2.0 0.15 4.5V 0V VIN ID=2A RL=5Ω 6 5 4 0 to 0.02 2.1 1.6 D PW=10μs D.C.≤1% VOUT 0.25 1 0.65 2 3 0.3 G 0.85 P.G 1 2 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : MCPH6 50Ω S MCH6421 0.07 6 5 4 3.5V 2.5V 4.5 ID -- VDS 8.0V 4.5V 2.0V 4.5 ID -- VGS VDS=10V 4.0 3.5 4.0 1.8V Drain Current, ID -- A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Drain Current, ID -- A 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1.5V Ta= 75 0 0.2 0.4 0.6 0.8 1.0 °C 25 °C 1.2 VGS=1.2V 0.8 0.9 1.0 0 1.4 1.6 1.8 Drain-to-Source Voltage, VDS -- V IT13836 Gate-to-Source Voltage, VGS -- V --25 °C IT13837 No. A1264-2/4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr MCH6421 120 RDS(on) -- VGS Ta=25°C 110 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 100 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 110 100 90 80 70 60 50 40 30 20 10 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 ID=0.5A 1.0A 2.0A =1.8 VGS =0.5 V, I D A A =1.0 V, I D 5 . 2 = VGS .0A I =2.


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