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Ordering number : ENA1264
MCH6421
SANYO Semiconductors
DATA SHEET
MCH6421
Features
• • •
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2✕0.8mm) Conditions Ratings 20 ±12 5.5 22 1.5 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=4.5V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V 0.4 2.0 3.8 29 43 69 38 61 99 Ratings min 20 1 ±10 1.3 typ max Unit V μA μA V S mΩ mΩ mΩ
Marking : KV
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70908PE TI IM TC-00001490 No. A1264-1/4
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MCH6421
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4.5V, ID=5.5A VDS=10V, VGS=4.5V, ID=5.5A VDS=10V, VGS=4.5V, ID=5.5A IS=5.5A, VGS=0V Ratings min typ 410 84 59 7.5 26 38 32 5.1 0.7 1.7 0.8 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Package Dimensions
unit : mm (typ) 7022A-009
Switching Time Test Circuit
VIN
0.25
VDD=10V
2.0
0.15
4.5V 0V VIN ID=2A RL=5Ω
6
5
4
0 to 0.02
2.1 1.6
D
PW=10μs D.C.≤1%
VOUT
0.25
1
0.65
2
3
0.3
G
0.85
P.G
1
2
3
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : MCPH6
50Ω
S
MCH6421
0.07
6
5
4
3.5V 2.5V
4.5
ID -- VDS
8.0V 4.5V
2.0V
4.5
ID -- VGS
VDS=10V
4.0 3.5
4.0
1.8V
Drain Current, ID -- A
3.5 3.0 2.5 2.0 1.5 1.0 0.5
Drain Current, ID -- A
3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
1.5V
Ta= 75
0 0.2 0.4 0.6 0.8 1.0
°C 25 °C
1.2
VGS=1.2V
0.8 0.9 1.0
0 1.4 1.6 1.8
Drain-to-Source Voltage, VDS -- V
IT13836
Gate-to-Source Voltage, VGS -- V
--25 °C
IT13837
No. A1264-2/4
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MCH6421
120
RDS(on) -- VGS
Ta=25°C
110
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
100 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
110
100 90 80 70 60 50 40 30 20 10 0 --60 --40 --20 0 20 40 60 80 100 120 140 160
ID=0.5A 1.0A 2.0A
=1.8 VGS
=0.5 V, I D
A
A =1.0 V, I D 5 . 2 = VGS .0A I =2.