GB100TS60NPBF

www.DataSheet.co.kr GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 108 A FEATURES Generation 5 Non Punch Through (NPT) technology Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz Low VCE(on) 10 μs short circuit capability Square RBSOA Positive VCE(on) temperature coefficient INT-A-PAK HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL approved file E78996 PRODUCT SUMMARY VCES IC DC VCE(on) at 100 A, 25 °C 600 V 108 A 2.6 V Compliant to RoHS directive 2002/95/EC Designed for industrial level BENEFITS Benchmark efficiency for UPS and welding application Rugged transient performance Direct mounting on heatsink Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Clamped inductive load current Diode continuous forward current Gate to emitter voltage Maximum power dissipation Isolation voltage SYMBOL VCES IC ICM ILM IF VGE PD VISOL TC = 25 °C TC = 80 °C Any terminal to case, t = 1 min TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TEST CONDITIONS MAX. 600 108 74 200 A 200 106 69 ± 20 390 W 219 2500 V V UNITS V Document Number: 94501 Revision: 04-May-10 For technical questions, contact: [email protected] www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GB100TS60NPbF Vishay High Pow...