GB05XP120KTPBF

www.DataSheet.co.kr GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 5 A FEATURES Generation 5 NPT 1200 V IGBT technology HEXFRED® diode with ultrasoft reverse recovery Very low conduction and switching losses Optional SMT thermistor (NTC) Aluminum oxide DBC Very low stray inductance design for high speed operation MTP Short circuit 10 μs Square RBSOA Operating frequencies 8 kHz to 60 kHz UL approved file E78996 Compliant to RoHS directive 2002/95/EC 1200 V 2.90 V 5A > 10 μs PRODUCT SUMMARY VCES VCE(on) typical at VGE = 15 V IC at TC = 100 °C tsc at TJ = 150 °C Designed and qualified for industrial level BENEFITS Optimized for inverter motor drive applications Low EMI, requires less snubbing Direct mounting to heatsink PCB solderable terminals Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Peak switching current Diode continuous forward current Peak diode forward current Gate to emitter voltage RMS isolation voltage Maximum power dissipation (including diode and IGBT) SYMBOL VCES IC ICM ILM IF IFM VGE VISOL PD Any terminal to case, t = 1 min TC = 25 °C TC = 100 °C TC = 100 °C TC = 25 °C TC = 100 °C TEST CONDITIONS MAX. 1200 12 5 24 A 24 5 12 ± 20 V 2500 76 W 31 UNITS V Document Number: 93912 Revision: 03-Aug-10 For technical questions within your region...