GA200TS60UX

www.DataSheet.co.kr Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Features Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Very low conduction and switching losses HEXFREDTM antiparallel diodes with ultra-soft recovery Industry standard package UL approved Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.74V @ VGE = 15V, IC = 200A Benefits Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding Low EMI, requires less snubbing INT-A-PAK Absolute Maximum Ratings Parameters V CES IC ICM ILM IFM V GE V ISOL PD Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation @ T C = 25°C @ T C = 85°C @ T C = 25°C Max 600 265 400 400 400 ± 20 2500 625 325 Units V A V W www.irf.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GA200TS60UX Bulletin I27221 03/06 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters VBRCES V CE(on) V GE(th) g fe I CES VFM I GES Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Gate Threshold Voltage Forward Transconductance Collector-to-Emiter Leakage Current Diode Forward Voltage drop Gate-to-Emitter Leakage Curre...