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BU105

Inchange Semiconductor

Silicon NPN Power Transistor


Description
isc Silicon NPN Power Transistor BU105 DESCRIPTION ·High Voltage-VCER= 1300V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in line operated B&W(19 and 20 inch 110℃ deflection circuits ) or color ( 11 and 14 inch...



Inchange Semiconductor

BU105

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