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VEC2904 Dataheets PDF



Part Number VEC2904
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description P-Channel Silicon MOSFET
Datasheet VEC2904 DatasheetVEC2904 Datasheet (PDF)

www.DataSheet.co.kr Ordering number : ENA1158 VEC2904 SANYO Semiconductors DATA SHEET VEC2904 Features • • PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications Composite type, facilitating high-density mounting. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Collector Voltage Emitter-to-Base Voltage Collector Current Colle.

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www.DataSheet.co.kr Ordering number : ENA1158 VEC2904 SANYO Semiconductors DATA SHEET VEC2904 Features • • PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications Composite type, facilitating high-density mounting. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Collector Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [FET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit --12 ±8 --4 --16 1.1 150 --55 to +150 V V A A W °C °C VCBO VCEO VECO VEBO IC ICP IB PC Tj Tstg When mounted on ceramic substrate (900mm2✕0.8mm) 1unit --30 --30 --6.5 --5 --3 --5 --600 1.1 150 --55 to +150 V V V V A A mA W °C °C Symbol Conditions Ratings Unit Marking : AH Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 40908PE TI IM TC-00001144 No. A1158-1/6 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr VEC2904 Electrical Characteristics at Ta=25°C Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time [FET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=-1mA, VGS=0V VDS=-12V, VGS=0V VGS=±6.4V, VDS=0V VDS=-6V, ID=--1mA VDS=-6V, ID=-2A ID=-2A, VGS=-4.5V ID=-1A, VGS=-2.5V ID=-0.3A, VGS=-1.8V VDS=-6V, f=1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-6V, VGS=-4.5V, ID=-4A VDS=-6V, VGS=-4.5V, ID=-4A VDS=-6V, VGS=-4.5V, ID=-4A IS=--4A, VGS=0V --12 --10 ±10 --0.3 4.5 7.6 37 54 76 940 230 180 14 120 97 110 11 1.6 2.8 -0.85 --1.2 49 75 107 --1.0 V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ICBO IEBO hFE fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)ECO V(BR)EBO ton tstg tf VCB=-30V, IE=0A VEB=-4V, IC=0A VCE=-2V, IC=--500mA VCE=-10V, IC=--500mA VCB=-10V, f=1MHz IC=-1.5A, IB=--30mA IC=-1.5A, IB=--75mA IC=-1.5A, IB=--30mA IC=-10μA, IE=0A IC=-1mA, RBE=∞ IC=-10μA, RCB=∞ IE=--10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 200 380 25 --160 --110 -0.83 --30 --30 --6.5 --5 50 270 25 --235 --160 --1.2 --0.1 --0.1 56.


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