VEC2616

www.DataSheet.co.kr Ordering number : ENA1822 VEC2616 SANYO Semiconductors DATA SHEET VEC2616 Features N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications ON-resistance Nch: RDS(on)1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions N-channel 60 ±20 3 12 0.9 1.0 150 --55 to +150 P-channel --60 ±20 --2.5 --10 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7012-002 0.25 0.3 8 7 6 5 0.15 Product & Package Information Package : VEC8 JEITA, JEDEC : Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking UP 1 2 2.9 0.75 3 0.65 4 TL 2.8 2.3 Lot No. 0.25 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 Electrical Connection 8 7 6 5 0.07 1 2 3 4 http://semicon.sanyo.com/en/network 91510PE TK IM TC-00002461 No. A1822-1/6 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr VEC2616 Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Dr...