N-Channel and P-Channel Silicon MOSFETs
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Ordering number : ENA0425
VEC2611
SANYO Semiconductors
DATA SHEET
VEC2611
Features
•
N-Channel...
Description
www.DataSheet.co.kr
Ordering number : ENA0425
VEC2611
SANYO Semiconductors
DATA SHEET
VEC2611
Features
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device Applications
The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting. 1.8V drive. Mounting height 0.75mm.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions N-channel 20 ±10 3 12 0.9 1.0 150 --55 to +150 P-channel -12 ±8 --2.6 --10.4 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.5A 20 1 ±10 0.4 3.3 5.6 1.3 V µA µA V S Symbol Conditions Ratings min typ max Unit
Marking : CP
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Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home app...
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