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UD2006LS-SB

Sanyo Semicon Device

Low VF Switching Diode

www.DataSheet.co.kr Ordering number : ENA1846 UD2006LS-SB SANYO Semiconductors DATA SHEET UD2006LS-SB Features • • ...


Sanyo Semicon Device

UD2006LS-SB

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www.DataSheet.co.kr Ordering number : ENA1846 UD2006LS-SB SANYO Semiconductors DATA SHEET UD2006LS-SB Features Diffused Junction Silicon Diode Low VF Switching Diode VF=1.4V max. (IF=20A) VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current R.M.S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM DC bias 50Hz resistive load, Sine wave Tc=32°C Tc=25°C (SANYO’s ideal heat dissipation condition) Package limited, DC 50Hz sine wave 1pulse Conditions Ratings 600 20 24 180 150 --55 to +150 Unit V A A A °C °C IO IF(RMS) IFSM Tj Tstg Package Dimensions unit : mm (typ) 7510-001 10.0 3.5 7.2 3.2 4.5 Product & Package Information Package JEITA, JEDEC 2.8 : TO-220FI(LS) : SC-67, SOT-186A, TO-220F, TO-220FULLPACK Transistor Minimum Packing Quantity : 100pcs./bag, 50 pcs./magazine 16.1 16.0 Marking 0.6 Electrical Connection 2 3.6 0.9 1.2 14.0 1.0 UD2006 LOT No. 0.75 1 2 2.4 0.7 1 1 : Cathode 2 : Anode 2.55 2.55 SANYO : TO-220FI(LS)-SB http://semicon.sanyo.com/en/network 12611SA TKIM TC-00002553 No. A1846-1/3 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr UD2006LS-SB Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr1 trr2 Rth(j-c) IR=1mA IF=20A VR=600V IF=10A, di / dt=100A/μs IF=0.5A, IR=1A Junction -C...




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