TIG111GMH

www.DataSheet.co.kr Ordering number : EN9014 TIG111GMH SANYO Semiconductors DATA SHEET TIG111GMH Features N-Channel Non Punch Through IGBT High Power High Speed Switching Applications Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25°C, Unless otherwise specified Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage Collector Current (DC) Collector Current (Pulse) Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VCES VGES IC*1 IC*2 ICP PD Tj Tstg Limited by Tjmax Limited by Tjmax @Tc=25°C*3 @Tc=100°C*3 Conditions Ratings 600 ±30 32 21 10 128 3 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 55 150 -55 to +150 Unit V V A A A A W W °C °C Pulse width Limited by Tjmax Note : *1 Shows chip capability *2 Collector current is calculated from the following for mula Tjmax - TC IC(TC)= Rth(j-c)×VCE(sat)max.(Tjmax, IC(TC)) *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. Package Dimensions unit : mm (typ) 7504-003 16.0 5.0 3.4 5.6 3.1 8.0 Product & Package Information Package : TO-3PMLH JEITA, JEDEC : SC-93, TO-247, SOT-199 Minimum Packing Quantity : 100 pcs./tray Marking Electrical Connection 2 21.0 22.0 0.8 4.0 TIG111 LOT No. 2.8 2.0 20.4 0.7 1 2 5.45 3.5 3 0.9 2.1 1 1 : Gate 2 : Collector 3 : Emitter SANYO : TO-...