TIG058E8

www.DataSheet.co.kr Ordering number : ENA1381 TIG058E8 SANYO Semiconductors DATA SHEET TIG058E8 Features N-Channel IGBT Light-Controlling Flash Applications Low-saturation voltage. Low voltage drive (4V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee*. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP dVCE / dt Tch Tstg PW≤1ms CM=150μF, VGE=4V VCE≤320V, starting Tch=25°C Conditions Ratings 400 ±6 ±8 150 400 150 -40 to +150 Unit V V V A V / μs °C °C Electrical Characteristics at Ta=25°C Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Symbol V(BR)CES ICES IGES Conditions IC=2mA, VGE=0V VCE=320V, VGE=0V VGE=±6V, VCE=0V Ratings min 400 10 ±10 typ max Unit V μA μA Marking : ZB Continued on next page. * : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, c...