TF252TH

www.DataSheet.co.kr Ordering number : ENA0842 TF252TH SANYO Semiconductors DATA SHEET TF252TH Features N-channel Silicon Junction FET Electret Condenser Microphone Applications High gain : GV=1.0dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz). Ultrasmall package facilitates miniaturization in end products. Best suited for use in Electret Condenser Microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C Marking: D Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case ...