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Ordering number : ENA0381
TF250TH
SANYO Semiconductors
DATA SHEET
TF250TH
Features
• • • • •
N-channel Silicon Junction FET
Electret Condenser Microphone Applications
Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C
Electrical Characteristics at Ta=25°C
Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol V(BR)GDO VGS(off) IDSS yfs Ciss Crss Conditions IG=-100µA VDS=2V, ID=1µA VDS=2V, VGS=0V VDS=2V, VGS=0V, f=1kHz VDS=2V, VGS=0V, f=1MHz VDS=2V, VGS=0V, f=1MHz Ratings min --20 --0.1 140* 0.7 1.3 2.8 0.55 --0.4 --1.0 350* typ max Unit V V µA mS pF pF
Marking: C
* : The TF250TH is classified by IDSS as follows : (unit : µA)
Continued on next page.
Rank IDSS
4 140 to 240
5 210 to 350
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82506GB MS IM TC-00000099 No. A0381-1/4
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TF250TH
Continued from preceding page.
Parameter Symbol Conditions Ratings min typ 0.8 --0.7 0.6 --100 --2.0 --1.0 max Unit
[Ta=25°C, VCC=2V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.] Voltage Gain Reduced Voltage Characteristic Frequency Characteristic Total Harmonic Distortion Output Noise Voltage GV ∆GVV ∆Gvf THD VNO VIN=10mV, f=1kHz VIN=10mV, f=1kHz, VCC=2→1.5V f=1kHz to 110Hz VIN=30mV, f=1kHz VIN=0V, A curve dB dB dB % dB
Package Dimensions
unit : mm (typ) 7031-001
Top View 1.4
Test Circuit
0.2
0.25
Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic
3
1.2 0.8
2.2kΩ 33µF +
VCC=2V VCC=1.5V
1
0.2
2
0.2 0.45
5pF
0.1
0.34
VTVM V THD OSC
Bottom View
0.07 0.07
1 : Drain 2 : Source 3 : Gate SANYO : VTFP
300
ID -- VDS
V GS=0V
Drain Current, ID -- µA
300
ID -- VDS
V GS= 0V
250
250
Drain Current, ID -- µA
200
200
--0.1V
150
150
--0.1V
100
100
--0.2V
50
50
--0.2V
--0.3V
0 0 0.5 1.0 1.5
--0.4V
0 2.0 IT10917 0 1 2 3
--0.3V
4
--0.4V
5 IT10918
Drain-to-Source Voltage, VDS -- V
Drain-to-Source Voltage, VDS -- V
No. A0381-2/4
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TF250TH
400 350
ID -- VGS
VDS=2V
400 350
ID -- VGS
VDS=2V
Drain Current, ID -- µA
250 200 150 100 50 0 --0.7
Drain Current, ID -- µA
300
300 250 200
50
µA
0µ A 15 0µ A
°C
150 100 50 0 --0.7
S =3
--0.6
--0.5
--0.4
--0.3
ID S
--0.2
--0.1
0
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
--2 5°C
0 IT10920 500 IT10922 2 3 IT10924 500 IT10926
75
Gate-to-Source Voltage, VGS -- V
2.0
yfs -- IDSS
IT10919 --0.7
Gate-to-Source Voltage, VGS -- V
VGS(off) -- IDSS
Ta =
--0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 100
25
Forward Transfer Admittance, yfs -- mS
1.8
1.6
1.4
1.2
1.0
0.8
0.6 0 100
Drain Current, IDSS -- µA
200
300
400
500 IT10921 1.0
Cutoff Voltage, VGS(off) -- V
VDS=2V VGS=0V f=1kHz
10
Ciss -- VDS
Drain Current, IDSS -- µA
200
300
400
Crss -- VDS
Reverse Transfer Capacitance, Crss -- pF
VGS=0V f=1MHz
7
7
Input Capacitance, Ciss -- pF
5
5
3
3
2
2
1.0 5 7 1.0 2 3 5 7 10 2 3
0.1 5 7 1.0 2 3 5 7 10
Drain-to-Source Voltage, VDS -- V
1.4 1.2 1.0
IT10923 0
GV -- IDSS
Drain-to-Source Voltage, VDS -- V
∆GVV -- IDSS
Voltage Gain, GV -- dB
0.8 0.6 0.4 0.2 0 --0.2 --0.4 --0.6 0
GV : VCC=2V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V
Reduced Voltage Characteristic, ∆GVV -- dB
--0.2
∆GVV : VCC=2V→1.5V VIN=10mV f=1kHz IDSS : VDS=2V
--0.4
--0.6
--0.8
--1.0
--1.2 0 100
100
Drain Current, IDSS -- µA
200
300
400
500 IT10925
Drain Current, IDSS -- µA
200
300
400
No. A038.