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TF250TH Dataheets PDF



Part Number TF250TH
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-channel Silicon Junction FET
Datasheet TF250TH DatasheetTF250TH Datasheet (PDF)

www.DataSheet.co.kr Ordering number : ENA0381 TF250TH SANYO Semiconductors DATA SHEET TF250TH Features • • • • • N-channel Silicon Junction FET Electret Condenser Microphone Applications Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=.

  TF250TH   TF250TH


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www.DataSheet.co.kr Ordering number : ENA0381 TF250TH SANYO Semiconductors DATA SHEET TF250TH Features • • • • • N-channel Silicon Junction FET Electret Condenser Microphone Applications Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol V(BR)GDO VGS(off) IDSS yfs Ciss Crss Conditions IG=-100µA VDS=2V, ID=1µA VDS=2V, VGS=0V VDS=2V, VGS=0V, f=1kHz VDS=2V, VGS=0V, f=1MHz VDS=2V, VGS=0V, f=1MHz Ratings min --20 --0.1 140* 0.7 1.3 2.8 0.55 --0.4 --1.0 350* typ max Unit V V µA mS pF pF Marking: C * : The TF250TH is classified by IDSS as follows : (unit : µA) Continued on next page. Rank IDSS 4 140 to 240 5 210 to 350 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82506GB MS IM TC-00000099 No. A0381-1/4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr TF250TH Continued from preceding page. Parameter Symbol Conditions Ratings min typ 0.8 --0.7 0.6 --100 --2.0 --1.0 max Unit [Ta=25°C, VCC=2V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.] Voltage Gain Reduced Voltage Characteristic Frequency Characteristic Total Harmonic Distortion Output Noise Voltage GV ∆GVV ∆Gvf THD VNO VIN=10mV, f=1kHz VIN=10mV, f=1kHz, VCC=2→1.5V f=1kHz to 110Hz VIN=30mV, f=1kHz VIN=0V, A curve dB dB dB % dB Package Dimensions unit : mm (typ) 7031-001 Top View 1.4 Test Circuit 0.2 0.25 Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 3 1.2 0.8 2.2kΩ 33µF + VCC=2V VCC=1.5V 1 0.2 2 0.2 0.45 5pF 0.1 0.34 VTVM V THD OSC Bottom View 0.07 0.07 1 : Drain 2 : Source 3 : Gate SANYO : VTFP 300 ID -- VDS V GS=0V Drain Current, ID -- µA 300 ID -- VDS V GS= 0V 250 250 Drain Current, ID -- µA 200 200 --0.1V 150 150 --0.1V 100 100 --0.2V 50 50 --0.2V --0.3V 0 0 0.5 1.0 1.5 --0.4V 0 2.0 IT10917 0 1 2 3 --0.3V 4 --0.4V 5 IT10918 Drain-to-Source Voltage, VDS -- V Drain-to-Source Voltage, VDS -- V No. A0381-2/4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr TF250TH 400 350 ID -- VGS VDS=2V 400 350 ID -- VGS VDS=2V Drain Current, ID -- µA 250 200 150 100 50 0 --0.7 Drain Current, ID -- µA 300 300 250 200 50 µA 0µ A 15 0µ A °C 150 100 50 0 --0.7 S =3 --0.6 --0.5 --0.4 --0.3 ID S --0.2 --0.1 0 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 --2 5°C 0 IT10920 500 IT10922 2 3 IT10924 500 IT10926 75 Gate-to-Source Voltage, VGS -- V 2.0 yfs -- IDSS IT10919 --0.7 Gate-to-Source Voltage, VGS -- V VGS(off) -- IDSS Ta = --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 100 25 Forward Transfer Admittance, yfs -- mS 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 100 Drain Current, IDSS -- µA 200 300 400 500 IT10921 1.0 Cutoff Voltage, VGS(off) -- V VDS=2V VGS=0V f=1kHz 10 Ciss -- VDS Drain Current, IDSS -- µA 200 300 400 Crss -- VDS Reverse Transfer Capacitance, Crss -- pF VGS=0V f=1MHz 7 7 Input Capacitance, Ciss -- pF 5 5 3 3 2 2 1.0 5 7 1.0 2 3 5 7 10 2 3 0.1 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 1.4 1.2 1.0 IT10923 0 GV -- IDSS Drain-to-Source Voltage, VDS -- V ∆GVV -- IDSS Voltage Gain, GV -- dB 0.8 0.6 0.4 0.2 0 --0.2 --0.4 --0.6 0 GV : VCC=2V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V Reduced Voltage Characteristic, ∆GVV -- dB --0.2 ∆GVV : VCC=2V→1.5V VIN=10mV f=1kHz IDSS : VDS=2V --0.4 --0.6 --0.8 --1.0 --1.2 0 100 100 Drain Current, IDSS -- µA 200 300 400 500 IT10925 Drain Current, IDSS -- µA 200 300 400 No. A038.


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