TF202C

www.DataSheet.co.kr Ordering number : ENA0727 TF202C SANYO Semiconductors DATA SHEET N-channel Silicon Junction FET TF202C Features Electret Condenser Microphone Applications Especially suited for use in electret condenser microphone for audio equipments and telephones. Ultrasmall package permitting applied sets to be small and slim. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Drain Current Symbol V(BR)GDO VGS(off) IDSS IG=-100µA VDS=5V, ID=1µA VDS=5V, VGS=0V Conditions Ratings min --20 --0.2 140* --0.6 --1.2 350* typ max Unit V V µA Marking: E * : The TF202C is classified by IDSS as follows : (unit : µA) Rank E4 E5 IDSS 140 to 240 210 to 350 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medic...