BU705F

isc Silicon NPN Power Transistor BU705F DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1350 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous ICM Collector Current-Peak 2.5 A 4 A IB Base Current- Continuous IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 4 A 29 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.37 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU705F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.9A 5 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 2A; IB= 0.9A VCE= VCESmax ; VBE= 0 VCE= VCESmax ; VBE= 0; TJ=125℃ VEB= 5V ; IC= 0 1.3 V 0.15 1 mA 1 mA hFE DC Current Gain IC= 2A ; VCE= 5V...