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BU113

Part Number	BU113
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jan 9, 2012
Detailed Description	isc Silicon NPN Power Transistors BU113 DESCRIPTION ·Collector-Emitter Voltage- :VCEX(SUS) = 700V(Min.) ·Collector Cur...
Datasheet	BU113 PDF File

Overview

isc Silicon NPN Power Transistors BU113 DESCRIPTION ·Collector-Emitter Voltage- :VCEX(SUS) = 700V(Min.
) ·Collector Current- IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output state of color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 700 V VCEX Collector-Emitter Voltage VBE= -5V 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC= 90℃ Tj Junction Temperature 4 A 30 W 150 ℃ Tstg Storage Temperature Range -65~1...

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