BU112

isc Silicon NPN Power Transistors BU112 DESCRIPTION ·Collector-Emitter Voltage- :VCEX(SUS) = 550V(Min.) ·Collector Current- IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for deflection circuits applications in color TV receivers fitted with 90℃ kinescope. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 550 V VCEX Collector-Emitter Voltage VBE= -5V 550 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.9 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Collector-Base Breakdown Voltage IE= 30mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A ICEX Collector Cutoff Current VCE= 550V; VBE= -5V hFE DC Current Gain IC= 6A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 4V COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz tf Fall Time IC=6A; IB1= 1A; VBE= -3V BU112 MIN TYP. MAX UNIT 10 V 3.0 V 10 mA 7 6 MHz 250 pF 1.0 μs NOTICE： ISC reserves th...