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BU104
Silicon NPN Power Transistor
Description
isc Silicon
NPN
Power
Transistor
BU104 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflexion output stage of B/W TV receivers. ABSOL...
Inchange Semiconductor
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