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MLN2037F

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

www.DataSheet.co.kr MLN2037F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN2037F is Designed for Class A Lin...


Advanced Semiconductor

MLN2037F

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Description
www.DataSheet.co.kr MLN2037F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN2037F is Designed for Class A Linear Applications up to 2.0 GHz. PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER FEATURES: Class A Operation PG = 5.0 dB at 5.0 W/2.0 GHz Omnigold™ Metalization System Common Emitter DIM B G L H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC 10 A 60 V 35 V 140 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 5.5 °C/W A B C D E F G H I J K L M N P .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 ORDER CODE: ASI10635 CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICES hFE Cob PG IC = 50 mA IC = 50 mA IE = 10 mA VE = 28 V VCE = 5.0 V VCB = 28 V TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 35 60 4.0 5 UNITS V V V mA --pF dB IC = 1.0 A f = 1.0 MHz ICQ = 800 mA f = 2.0 GHz 10 100 15 VCE = 20 V POUT = 5.0 W 5.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ERROR! REFER...




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