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EGP10C Dataheets PDF



Part Number EGP10C
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Glass Passivated Ultrafast Rectifier
Datasheet EGP10C DatasheetEGP10C Datasheet (PDF)

Not for New Designs EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier SUPERECTIFIER® DO-41 (DO-204AL) FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B1.

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Not for New Designs EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier SUPERECTIFIER® DO-41 (DO-204AL) FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr VF TJ max. Package 1.0 A 50 V, 100 V, 150 V, 200 V, 300 V, 400 V 30 A 50 ns 0.95 V, 1.25 V 150 °C DO-41 (DO-204AL) Circuit configuration Single TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. MECHANICAL DATA Case: DO-41 (DO-204AL), molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL EGP10A EGP10B Maximum repetitive peak reverse voltage Maximum RMS voltage VRRM 50 100 VRMS 35 70 Maximum DC blocking voltage Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 55 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load VDC 50 100 IF(AV) IFSM Operating junction and storage temperature range TJ, TSTG EGP10C 150 105 150 EGP10D 200 140 200 1.0 30 -65 to +150 EGP10F 300 210 300 EGP10G 400 280 400 UNIT V V V A A °C Revision: 06-Oct-2021 1 Document Number: 88582 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Designs EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL EGP10A EGP10B EGP10C EGP10D Maximum instantaneous forward voltage 1.0 A VF 0.95 Maximum DC reverse TA = 25 °C 5.0 current at rated DC blocking voltage TA = 125 °C IR 100 Maximum reverse recovery time Typical junction capacitance IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 4.0 V, 1 MHz CJ 50 22 EGP10F EGP10G 1.25 15 UNIT V μA ns pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F Typical thermal resistance RθJA (1) 50 Note (1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted EGP10G UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE EGP10D-E3/54 0.337 54 EGP10D-E3/73 0.337 73 BASE QUANTITY 5500 3000 DELIVERY MODE 13" diameter paper tape and reel Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Rectified Current (A) Peak Forward Surge Current (A) 1.0 0.5 Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 0 0 25 50 75 100 125 150 175 Lead Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve 30 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 25 20 15 10 5 0 1 10 100 Number of Cycles at 60 Hz Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 06-Oct-2021 2 Document Number: 88582 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Designs EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor Instantaneous Forward Current (A) 100 Pulse Width = 300 μs 1 % Duty Cycle 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.2 EGP10A thru EGP10D EGP10F and EGP10G 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Junction Capacitance (pF) 70 TJ = 25 °C 60 f = 1.0 MHz Vsig = 50 mVp-p 50 40 30 20 10 EGP10A thru EGP10D EGP10F and EGP10G 0 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance 1000 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Leakage Current (μA) 100 TJ = 150 °C 10 TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Vo.


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