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J377 Dataheets PDF



Part Number J377
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SJ377
Datasheet J377 DatasheetJ377 Datasheet (PDF)

www.DataSheet.co.kr 2SJ377 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L −π−MOSV) 2 2SJ377 5.2 ± 0.2 1.5 ± 0.2 Relay Drive, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain-source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.16 Ω (typ.) 1.2 MAX. Unit: mm 6.5 ± 0.2 0.6 MAX. : IDSS = −100 μA (max) (VDS = −60 V) : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) 9.5 ± 0.3 : |Yfs| = 4.0 S (typ.).

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www.DataSheet.co.kr 2SJ377 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L −π−MOSV) 2 2SJ377 5.2 ± 0.2 1.5 ± 0.2 Relay Drive, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain-source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.16 Ω (typ.) 1.2 MAX. Unit: mm 6.5 ± 0.2 0.6 MAX. : IDSS = −100 μA (max) (VDS = −60 V) : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) 9.5 ± 0.3 : |Yfs| = 4.0 S (typ.) 5.5 ± 0.2 1.1 ± 0.2 0.6 MAX. 0.8 MAX. 2.3 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −60 −60 ±20 −5 −20 20 273 −5 2 150 −55 to 150 Unit V V V A A W mJ A mJ °C °C 0.6 ± 0.15 1 2 1.05 MAX. 3 2.3 ± 0.15 2.3 ± 0.15 0.1 ± 0.1 2 1 Pulse (Note 1) GATE DRAIN (HEAT SINK) 3. SOURSE 1. 2. 3 Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 6.25 125 Unit °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −25 V, Tch = 25°C (initial), L = 14.84 mH, RG = 25 Ω, IAR = −5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2010-02-05 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SJ377 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −60 V, VGS = 0 V ID = −10 mA, VGS = 0 V VDS = −10 V, ID = −1 mA VGS = −4 V, ID = −2.5 A VGS = −10 V, ID = −2.5 A VDS = −10 V, ID = −2.5 A Min — — −60 −0.8 — — 2.0 — — — — Typ. — — — — 0.24 0.16 4.0 630 95 290 25 Max ±10 −100 — −2.0 0.28 0.19 — — — — — pF Unit μA μA V V Ω S Turn-on time Switching time Fall time ton — 45 — ns tf — 55 — Turn-off time Total gate charge (Gate-source plus gate-drain) Gate-source charge Gate-drain (“Miller”) charge toff Qg Qgs Qgd VDD ≈ −48 V, VGS = −10 V, ID = −5 A — — — — 200 22 16 6 — — — — nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition — — IDR = −5 A, VGS = 0 V IDR = −5 A, VGS = 0 V dlDR / dt = 50 A / μS Min — — — — — Typ. — — — 80 0.1 Max −5 −20 1.7 — — Unit A A V ns μC Marking Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] J377 Part No. Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-02-05 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SJ377 3 2010-02-05 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SJ377 4 2010-02-05 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SJ377 5 2010-02-05 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SJ377 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reprod.


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