www.vishay.com
BU1506, BU1508, BU1510
Vishay General Semiconductor
Enhanced isoCink+™ Bridge Rectifiers
+ ~~ isoCink+™
Case Style BU
- ~~+
+~~ -
LINKS TO ADDITIONAL RESOURCES 3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
IR VF at IF = 7.5 A
TJ max. Package
15 A 600 V, 800 V, 1000 V
200 A 5 μA 0.87 V 150 °C BU
Circuit configurations
In-line
FEATURES
• UL recognition file number E312394
• Thin single in-line package
• Glass passivated chip junction
• Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU15065S)
Available
• Superior thermal conductivity
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications.
MECHANICAL DATA
Case: BU
Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 and M3 suffix meet JESD 201 class 1A whisker test
Polarity: as marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Average rectified forward current (Fig. 1, 2)
Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) TJ = 25 °C Operating junction and storage temperature range
TC = 80 °C (1) TA = 25 °C (2)
VRRM IO
IFSM I2t TJ, TSTG
Notes (1) With 60 W air cooled heatsink (2) Without heatsink, free air
BU1506 600
BU1508 800 15 3.4
200
160 -55 to +150
BU1510 1000
UNIT V A
A A2s °C
Revision: 09-Jul-2020
1
Document Number: 84803
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
BU1506, BU1508, BU1510
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Maximum instantaneous forward voltage per diode (1)
IF = 7.5 A
TA = 25 °C TA = 125 °C
VF
Maximum reverse current per diode rated VR
TA = 25 °C TA = 125 °C
IR
Typical junction capacitance per diode 4.0 V, 1 MHz
CJ
0.97 0.87
90 70
Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle
MAX. 1.05 0.95 5.0 250
-
UNIT V
μA pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BU1506
Typical thermal resistance
RJC (1) RJA (2)
Notes
(1) With 60 W air cooled heatsink (2) Without heatsink, free air
BU1508 2.5 20
BU1510
UNIT °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BU1506-E3/45
4.75
45
BU1506-E3/51
4.75
51
BU1506-M3/45
4.75
45
BU15065S-E3/45
4.75
45
BASE QUANTITY 20 250 20 20
DELIVERY MODE Tube
Paper tray Tube Tube
Revision: 09-Jul-2020
2
Document Number: 84803
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
BU1506, BU1508, BU1510
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified)
20 With Heatsink Sine-Wave, R-Load TC Measured at Device Bottom
15
10
TC
TC
5
100 TJ = 150 °C
10 TJ = 125 °C
1
0.1
TJ = 25 °C
Instantaneous Forward Current (A)
Average Forward Output Current (A)
Average Forward Rectified Current (A)
0
0
25
50
75
100 125 150
Case Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
5
4
3
2
Without Heatsink 1 Sine-Wave, R-Load
Free Air, TA
0
0
25
50
75
100 125 150
Ambient Temperature (°C)
Fig. 2 - Forward Current Derating Curve
36 32 28 24 20 16 12
8 4 0
0 2 4 6 8 10 12 14 16 18 Average Forward Current (A)
Fig. 3 - Forward Power Dissipation
Junction Capacitance (pF)
Instantaneous Reverse Current (µA)
0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Instantaneous Forward Voltage (V)
Fig. 4 - Typical Forward Characteristics Per Diode
1000 100 10
TJ = 150 °C TJ = 125 °C
1
0.1
TJ = 25 °C
0.01 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Characteristics Per Diode
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance Per Diode
Forward Power Dissipation (W)
Revision: 09-Jul-2020
3
Document Number: 84803
For technic.