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BU1506 Dataheets PDF



Part Number BU1506
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Bridge Rectifiers
Datasheet BU1506 DatasheetBU1506 Datasheet (PDF)

www.vishay.com BU1506, BU1508, BU1510 Vishay General Semiconductor Enhanced isoCink+™ Bridge Rectifiers + ~~ isoCink+™ Case Style BU - ~~+ +~~ - LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF at IF = 7.5 A TJ max. Package 15 A 600 V, 800 V, 1000 V 200 A 5 μA 0.87 V 150 °C BU Circuit configurations In-line FEATURES • UL recognition file number E312394 • Thin single in-line package • Glass passivated chip junction • Available for BU-5S l.

  BU1506   BU1506


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www.vishay.com BU1506, BU1508, BU1510 Vishay General Semiconductor Enhanced isoCink+™ Bridge Rectifiers + ~~ isoCink+™ Case Style BU - ~~+ +~~ - LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF at IF = 7.5 A TJ max. Package 15 A 600 V, 800 V, 1000 V 200 A 5 μA 0.87 V 150 °C BU Circuit configurations In-line FEATURES • UL recognition file number E312394 • Thin single in-line package • Glass passivated chip junction • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU15065S) Available • Superior thermal conductivity • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications. MECHANICAL DATA Case: BU Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 and M3 suffix meet JESD 201 class 1A whisker test Polarity: as marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Average rectified forward current (Fig. 1, 2) Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) TJ = 25 °C Operating junction and storage temperature range TC = 80 °C (1) TA = 25 °C (2) VRRM IO IFSM I2t TJ, TSTG Notes (1) With 60 W air cooled heatsink (2) Without heatsink, free air BU1506 600 BU1508 800 15 3.4 200 160 -55 to +150 BU1510 1000 UNIT V A A A2s °C Revision: 09-Jul-2020 1 Document Number: 84803 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com BU1506, BU1508, BU1510 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. Maximum instantaneous forward voltage per diode (1) IF = 7.5 A TA = 25 °C TA = 125 °C VF Maximum reverse current per diode rated VR TA = 25 °C TA = 125 °C IR Typical junction capacitance per diode 4.0 V, 1 MHz CJ 0.97 0.87 90 70 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle MAX. 1.05 0.95 5.0 250 - UNIT V μA pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BU1506 Typical thermal resistance RJC (1) RJA (2) Notes (1) With 60 W air cooled heatsink (2) Without heatsink, free air BU1508 2.5 20 BU1510 UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BU1506-E3/45 4.75 45 BU1506-E3/51 4.75 51 BU1506-M3/45 4.75 45 BU15065S-E3/45 4.75 45 BASE QUANTITY 20 250 20 20 DELIVERY MODE Tube Paper tray Tube Tube Revision: 09-Jul-2020 2 Document Number: 84803 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com BU1506, BU1508, BU1510 Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified) 20 With Heatsink Sine-Wave, R-Load TC Measured at Device Bottom 15 10 TC TC 5 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C Instantaneous Forward Current (A) Average Forward Output Current (A) Average Forward Rectified Current (A) 0 0 25 50 75 100 125 150 Case Temperature (°C) Fig. 1 - Derating Curve Output Rectified Current 5 4 3 2 Without Heatsink 1 Sine-Wave, R-Load Free Air, TA 0 0 25 50 75 100 125 150 Ambient Temperature (°C) Fig. 2 - Forward Current Derating Curve 36 32 28 24 20 16 12 8 4 0 0 2 4 6 8 10 12 14 16 18 Average Forward Current (A) Fig. 3 - Forward Power Dissipation Junction Capacitance (pF) Instantaneous Reverse Current (µA) 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Instantaneous Forward Voltage (V) Fig. 4 - Typical Forward Characteristics Per Diode 1000 100 10 TJ = 150 °C TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Reverse Characteristics Per Diode 1000 100 10 0.1 1 10 100 Reverse Voltage (V) Fig. 6 - Typical Junction Capacitance Per Diode Forward Power Dissipation (W) Revision: 09-Jul-2020 3 Document Number: 84803 For technic.


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