Document
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Ordering number : ENA0537
EFC4601
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
EFC4601
Features
• • •
General-Purpose Switching Device Applications
2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature Storage Temperature Symbol VSSS VGSS IS ISP PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (5000mm2✕0.8mm) Conditions Ratings 24 ±12 6 40 1.6 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Source-to-Source Breakdown Voltage Zero-Gate Voltage Source Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)SSS ISSS IGSS VGS(off) ⏐yfs⏐ RSS(on)1 RSS(on)2 RSS(on)3 RSS(on)4 RSS(on)5 Conditions IS=1mA, VGS=0V VSS=20V, VGS=0V VGS=±8V, VSS=0V VSS=10V, IS=1mA VSS=10V, IS=3A IS=3A, VGS=4.5V IS=3A, VGS=4.0V IS=3A, VGS=3.7V IS=3A, VGS=3.1V IS=3A, VGS=2.5V Test Circuit 1 Test Circuit 1 Test Circuit 2 Test Circuit 3 Test Circuit 4 Test Circuit 5 Test Circuit 5 Test Circuit 5 Test Circuit 5 Test Circuit 5 0.5 5 23.5 25 27 27 30 8.5 34 36 38 42 50 44 47 49 55 70 Ratings min 24 1 ±10 1.3 typ max Unit V μA μA V S mΩ mΩ mΩ mΩ mΩ
Static Source-to-Source On-State Resistance
Marking : FA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32608PE TI IM TC-00001280 No. A0537-1/6
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EFC4601
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Forward Source-to-Source Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg VF(S-S) Conditions VSS=10V, f=1MHz VSS=10V, f=1MHz VSS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VSS=10V, VGS=10V, IS=6A IS=6A, VGS=0V Test Circuit 8 Test Circuit 8 Test Circuit 8 Test Circuit 7 Test Circuit 7 Test Circuit 7 Test Circuit 7 Test Circuit 6 Ratings min typ 950 170 120 20 185 54 200 8.1 1 1.2 max Unit pF pF pF ns ns ns ns nC V
Package Dimensions
unit : mm (typ) 7056-001
1.81 4 3
Electrical Connection
1
2
1.81
0.28
1
2
3
0.65 1
0.65
0.27
1 : Source1 2 : Gate1 3 : Gate2 4 : Source2 4
Top view
2
1 : Source1 2 : Gate1 3 : Gate2 4 : Source2
0.37
4
3
SANYO : EFCP1818-4CA-055
No. A0537-2/6
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EFC4601
Test Circuits are example of measuring FET1 side
Test Circuit 1 VSSS / ISSS
S2
Test Circuit 2 IGSS (+) / (--)
S2
G2
G2
G1
G1
S1
IT11565
S1
IT11566
Test Circuit 3 VGS (off)
S2
Test Circuit 4 ⏐yfs⏐
S2
G2
G2
10V 1mA
G1
G1
S1
IT11567
S1
IT11568
Test Circuit 5 RSS (on)
S2
Test Circuit 6 VF (S-S)
S2
4.5V
G2
G2
G1
G1
S1
IT11569
S1
IT11570
Test Circuit 7 td (on), tr, td (off), tf
VDD=10V RL VIN V S1 OUT
G1
PW=10μs D.C.≤1%
G2
S2
IT11571
* Note: Connect the mesurement terminal reversely if you want to measure the FET2 side.
No. A0537-3/6
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