ECH8659

www.DataSheet.co.kr Ordering number : ENA1224 ECH8659 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8659 Features General-Purpose Switching Device Applications 4V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit When mounted on ceramic substrate (900mm2✕0.8mm) Conditions Ratings 30 ±20 7 40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A 1.2 2.2 3.7 Ratings min 30 1 ±10 2.6 typ max Unit V μA μA V S Marking : TE Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be ...