N-Channel Silicon MOSFET
www.DataSheet.co.kr
Ordering number : ENA1011
ECH8655R
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH...
Description
www.DataSheet.co.kr
Ordering number : ENA1011
ECH8655R
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8655R
Features
General-Purpose Switching Device Applications
Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit When mounted on ceramic substrate (900mm2✕0.8mm) Conditions Ratings 24 ±12 9 60 1.4 1.5 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4.5A 0.5 4.8 8 Ratings min 24 1 ±10 1.3 typ max Unit V μA μA V S
Marking : TA
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Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office eq...
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