EC4409C

www.DataSheet.co.kr Ordering number : ENA1197 EC4409C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4409C Features General-Purpose Switching Device Applications 1.5V drive. Halogen Free compliance (UL94 HB). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on glass epoxy substrate (145mm✕80mm✕1.6mm) Conditions Ratings 30 ±10 0.35 1.4 0.15 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100μA VDS=10V, ID=200mA ID=200mA, VGS=4V ID=100mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.4 360 600 0.75 0.9 1.8 28 6.0 3.1 1.0 1.3 3.6 Ratings min 30 1 ±10 1.3 typ max Unit V μA μA V mS Ω Ω Ω pF pF pF Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the...